Optical Characterization of Zinc Oxide Thin Film Semiconductors

Zinc oxide is a wide band gap semiconductor with many potential applications, including ultraviolet lasers, transparent circuits, and radiation resistant devices. In order to create these devices, both n- and p- type materials are required, however reliable methods of p-type doping of zinc oxide have yet to be developed. We have attempted to grow arsenic doped zinc oxide films using RF magnetron sputtering. Sample quality and doping are studied with stimulated photoluminescence, which has been found to improve with As doping and annealing processes. This in turn allows us to further refine our film growth process in the hopes of creating consistently p-type material.