Dangling bond states at the diamond surface characterized by Dynamic Tunneling force microscopy

Recently the creation of atomic scale quantum states composed of dangling bonds (DBs) at the surface of hydrogenated Si (100) has been explored [1]. At room temperature, electrons in these DB states are trapped for sub-nanosecond times. At the bare reconstructed diamond surface C(100)-(2x1), some DB states have much larger trapping energies (~ 1 eV) [2]. Electrons can be trapped in these atomic sized states for long times (hours) at room temperature, providing a basis for creating atomic scale charge and spin quantum devices [3]. Dynamic Tunneling Force Microscopy (DTFM) is an effective method to characterize the spatial distribution and energy of such electron trap states [4,5]. DTFM measurements of DB states at the diamond surface will be presented and the properties of the DB states will be discussed. [1] J.L. Pitters, L.Livadaru, M.B. Haider & R.A. Wolkow, J. Chem. Phys. 134, 064712 (2011). [2] Z. Zhang, M. Wensell & J. Bernholc, Phys. Rev. B, 51, 5291 (1995). [3] L. Livadaru, J. Pitters, M. Taucer & R.A. Wolkow, Phys. Rev. B, 84, 205416 (2011). [4] R. Wang, S.W. King & C.C. Williams, Appl. Phys. Lett. 105, 052903 (2014). [5] R. Wang & C.C. Williams, Rev. Sci. Instr. 86, 093708 (2015).