N-type Doping in LPCVD-grown β-Ga₂O₃ Films using Solid Source Dopants

We report on the growth of n-type Gallium oxide (Ga₂O₃) films using a Low-pressure CVD setup with elemental Germanium and Silicon Oxide sources. The availability of high-quality bulk substrates and controllable n-type conductivity make Ga₂O₃ promising for high performing power electronic devices. Low-pressure CVD is a simple, low-cost technique to grow high-quality Gallium Oxide high growth rates and low impurity concentration.

The as-grown films on sapphire substrates were characterized using AFM, SEM and variable temperature hall measurements. The carrier concentration ranged from 5e17 – 1e19 cm^-3 in Ge doped films, the Si-doped films spanned a range of 7e17 to 2e18 cm^-3. Homoepitaxially-grown film on bulk Ga₂O₃ substrate with a doping concentration of 1e17 cm^-3 exhibited a room temperature mobility of 59 cm²/V-s with a peak mobility of 350 cm²/V-s at 120 K. These results indicate the promise of high-quality Ga₂O₃ films grown using cost-effective techniques for improved performance of power electronic devices.