Device Architecture for Next Generation CdTe PV

Thin CdTe solar cells with absorber thickness of approximately 1.0 $\mu $m were fabricated with varied close-space sublimation (CSS) conditions to optimize the performance of the cells. A CdCl2 dose time of approximately 125 seconds is the optimal treatment for passivation of these devices, and the addition of an optimal CuCl treatment of 2 second dose time with a 50 second anneal produces a 1.0 $\mu $m cell that is approximately 14{\%} efficient. Single and two-photon TRPL measurements from both sides of the solar cell indicate that back interface recombination dominates recombination losses and a high diode quality factor is the main limitation on fill factor for thin CdTe cells. The optimized device structure produces devices that have repeatable \textasciitilde 14{\%} efficiency and cells show excellent crystal structure and continuous MgZnO and Te layers.