Novel cold-wall CVD synthesis of highly uniform MoS$_{\mathrm{2}}$ thin films

We present results from a novel cold-wall chemical vapor deposition method for growing MoS$_{\mathrm{2}}$. This method affords independent control over all deposition parameters. Ar carrier gas flow rate and pressure, substrate temperature and the temperatures of the individual solid-source precursors can all be independently varied during growth onto 100 nm-thick SiO$_{\mathrm{2}}$ films on Si substrates. Individually optimizing each deposition parameter enables the formation of islanded, single-layer MoS$_{\mathrm{2}}$ films. At the optimal growth parameters, we were able to repeatably grow samples with a Mo coverage that corresponds to 0.3 \textpm 0.03 ML of MoS$_{\mathrm{2}}$. Mo coverage, feature size and feature density on these samples exhibited uniformity over the central 32 mm$^{\mathrm{2}}$ of the sample.