Selective epitaxial growth solutions for Si based alloys; Si:C:P, Si:P, Si:C, i-Si

COFFEE_KLATCH · Invited

Abstract

Strain enhancing techniques for boosting carrier mobility in PMOS transistors has been in production since the 90 nm process node. SiGe alloys are used to induce compressive strain initially in planar MOSFETs and more recently in finFET device channels thereby increasing the hole mobility. For the NMOS transistor the use of tensile strain to enhance electron mobility has only recently been applied starting at the 20 nm node. This is accomplished by alloying silicon with carbon and/or phosphorus both of which have smaller atomic radii than silicon thus generating the desired strain. SiC:P and to a lesser extent Si:P alloys pose new challenges not encountered with SiGe:B PMOS stressors. Among these challenges are the low solubility limits which require low temperature metastable growth techniques such as chemical vapor deposition (CVD) to be employed. This presentation reviews the history and performance enhancements of PMOS stressors and presents recent accomplishments related to NMOS SiC:P and Si:P stressors processed on finFET structures.

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Authors

  • John Colton

    Brigham Young University Dept. of Physics and Astronomy, Brigham Young University, None, The College of William and Mary/Jefferson Lab, Brigham Young University-Idaho, Blue Ridge Research and Consulting LLC, Air Force Research Laboratory - Wright Patterson Air Force Base, Brigham Young Univ - Provo, Blue Ridge Research and Consulting, University of Utah, SRI International, Utah State University, Utah Valley University, Los Alamos National Laboratory, Professor, Graduate, United States Air Force Academy, Arizona State Univ, SiO2 NanoTech, Entrepix Inc, AFRL, Advisor, Brigham Young University- Provo, University of New Mexico, Univ of Utah, University of Wisconsin -- Madison, New Mexico Tech Physics Dept., Retired, Department of Physics and Astronomy, University of Utah, Department of Physics \& Astronomy, University of Hawai'i, JILA and University of Colorado, Boulder, National Institute of Standards and Technology, Boulder, University of Colorado, Boulder, Lawrence Berkeley National Laboratory, National Institute of Standards and Technology, Space Dynamics Lab, New Mexico Tech, BYU Professor, Brigham Young University -- Provo, Northern Arizona University, University of Colorado Boulder, Colorado State University, University of Utah, Department of Physics, New Mexico State University