Electric readout and storage concepts for electron and nuclear spin states in silicon

A variety of concepts utilizing spins in semiconductors for information storage and processing have been proposed in recent years. One of these concepts [1] uses the phosphorous nucleus in crystalline silicon as a quantum bit, an approach which combines longest known spin coherence times and, therefore, spin storage times, with already existing, well developed and highly reliable, crystalline silicon nano-technology. Our research is focused on implementations of electric readout devices for electron- and nuclear-spins in silicon. I will review different experiments which show how donor electrons [2-4] and nuclear [5] spins of phosphorous atoms in crystalline silicon can be used as a electrically readable spin memories with long storage times for classical and quantum information and how nuclear spin qubits can be initialized [6].\\[4pt] [1] B. E. Kane, Nature 393, 133 (1998).\\[0pt] [2] A. R. Stegner, C. Boehme, H. Huebl, M. Stutzmann, K. Lips, M. S. Brandt, Nature Physics 2, 835 (2006). \\[0pt] [3] S.-Y. Paik, S.-Y. Lee, W. J. Baker, D. R. McCamey, and C. Boehme, Phys. Rev. B 81, 075214 (2010).\\[0pt] [4] G. W. Morley, D. R. McCamey, H. A. Seipel, L.-C. Brunel, J. van Tol, C. Boehme, Phys. Rev. Lett. 101, 207602 (2008).\\[0pt] [5] D. R. McCamey, J. van Tol, G. W. Morley, C. Boehme, Science 330, 1652 (2010).\\[0pt] [6] D. R. McCamey, J. van Tol, G. W. Morley, C. Boehme, Phys. Rev. Lett. 102, 027601 (2009).